IR2130J - Infineon Technologies

Manufacturer Part Number

IR2130J

Manufacturer

Infineon Technologies

Introduction

The IR2130J is a 3-phase IGBT/MOSFET gate driver that provides high-performance, cost-effective gate driving for a wide range of power conversion applications. It features a high-side voltage capability up to 600V, flexible input control, and advanced protection features to ensure reliable operation.

Product Features and Performance

Supports 3-phase IGBT and N-Channel MOSFET devices

Operates from a 10V to 20V supply voltage

Peak source/sink current of 250mA/500mA

Typical rise/fall times of 80ns/35ns

-40°C to 150°C operating temperature range

Integrated bootstrap diodes for high-side gate drive

Undervoltage lockout, thermal shutdown, and fault detection

Product Advantages

Reliable and robust gate driving solution

Helps improve system efficiency and reduce energy consumption

Suitable for a wide range of power electronics applications

Key Reasons to Choose This Product

High-performance gate driving with advanced protection features

Cost-effective and easy to integrate into your design

Proven reliability and long-term availability from Infineon Technologies

Quality and Safety Features

Designed and manufactured to the highest quality standards

Robust protection features to ensure safe and reliable operation

Compatibility

The IR2130J is compatible with a wide range of IGBT and N-Channel MOSFET devices commonly used in power conversion applications.

Application Areas

Motor drives

Power inverters

Uninterruptible power supplies (UPS)

Industrial and renewable energy applications

Product Lifecycle

The IR2130J is an obsolete product, meaning it is nearing the end of its lifecycle. Customers are advised to contact our website's sales team for information on available equivalent or alternative models.