Manufacturer Part Number
IR2113PBF
Manufacturer
Infineon Technologies
Introduction
IR2113PBF is a high-power gate driver designed for half-bridge applications within power management systems, suitable for driving IGBTs and N-Channel MOSFETs.
Product Features and Performance
Supports half-bridge driven configuration
Controls two independent channels
Compatible with IGBT, N-Channel MOSFET gate types
Operating supply voltage range: 3.3V to 20V
High rise and fall times: 25ns and 17ns respectively
High side voltage tolerance up to 600V (Bootstrap)
Non-inverting input type
Peak output current: 2A (Source), 2A (Sink)
Operational at a temperature range of -40°C to 150°C
Through-hole mounting type
Product Advantages
High-current drive capability
Compatibility with high voltage applications
Robust thermal performance suited for extreme environments
Simple integration due to DIP-14 packaging
Key Technical Parameters
Voltage Supply: 3.3V ~ 20V
Logic Voltage VIL, VIH: 6V, 9.5V
Current Peak Output (Source, Sink): 2A, 2A
High Side Voltage Max (Bootstrap): 600 V
Rise / Fall Time (Typ): 25ns, 17ns
Quality and Safety Features
Extended temperature operational capability ensures reliability under thermal stress
Compatibility
Compatible with IGBT and N-channel MOSFETs
Application Areas
Suitable for high-power applications in industrial, automotive, and consumer electronics sectors.
Product Lifecycle
Marked as 'Not For New Designs,' indicating that it may be nearing the end of its production life, with potential recommendations for replacements or next-generation upgrades available from Infineon Technologies.
Several Key Reasons to Choose This Product
High-voltage operation up to 600V conducive for robust applications
Dual independent channel operation facilitates complex designs
Enhanced thermal performance making it ideal for high-temperature environments
Suitable for a range of power management applications across various industries due to its versatile features and high reliability in extreme conditions.