IR2104PBF - Infineon Technologies

Manufacturer Part Number

IR2104PBF

Manufacturer

Infineon Technologies

Introduction

Half-bridge driver designed for power management applications

Product Features and Performance

Synchronous channel operation

Two driver channels

Compatible with IGBT and N-Channel MOSFET gate types

Wide supply voltage range: 10V to 20V

Non-inverting input type

High side voltage capability up to 600V (Bootstrap)

Fast rise and fall times, typical 100ns/50ns

High-temperature operation from -40°C to 150°C

Product Advantages

Efficient half-bridge configuration

Strong peak output current capabilities: 210mA source, 360mA sink

Suitable for high-side and low-side gate drive applications

Robust thermal performance for reliability

Key Technical Parameters

Driven Configuration: Half-Bridge

Channel Type: Synchronous

Number of Drivers: 2

Gate Type: IGBT, N-Channel MOSFET

Logic Voltage - VIL, VIH: 0.8V, 3V

Current - Peak Output (Source, Sink): 210mA, 360mA

High Side Voltage - Max (Bootstrap): 600 V

Rise / Fall Time: 100ns, 50ns

Quality and Safety Features

Extended operating temperature range

Under-voltage lockout for reliability

High voltage capability for protection

Compatibility

Compatible with a wide range of IGBTs and N-Channel MOSFETs

Through-hole mounting for easy integration

Application Areas

Motor control

Switching power supplies

Inverters

Class D audio amplifiers

Product Lifecycle

Not For New Designs

Consider alternatives for new applications

Reasons to Choose This Product

Optimized for half-bridge circuits

Versatile driving capability for multiple gate types

High switching performance with fast rise and fall times

Long operating life under high-temperature conditions

Easy to integrate with through-hole mounting technology