Manufacturer Part Number
IPZ65R045C7XKSA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET with CoolMOS C7 technology, optimized for high-efficiency, high-power density switch-mode power supplies.
Product Features and Performance
Extremely low on-state resistance for high efficiency
Fast switching speed for high-frequency operation
Low gate charge for high-frequency, high-efficiency applications
Superior avalanche ruggedness and ESD capability
Optimized for high-power density designs
Product Advantages
Reduced power losses for higher efficiency
Enables more compact and lightweight power supply designs
Improved thermal performance and reliability
Key Technical Parameters
Drain-Source Voltage (Vdss): 650V
On-State Resistance (Rds(on)): 45mΩ
Continuous Drain Current (Id): 46A
Input Capacitance (Ciss): 4340pF
Power Dissipation (Tc): 227W
Operating Temperature Range: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
ESD protection
Avalanche ruggedness
Compatibility
Through-hole mounting (TO-247-4 package)
Application Areas
High-efficiency, high-power density switch-mode power supplies
Industrial motor drives
Uninterruptible power supplies (UPS)
Renewable energy systems
Other high-power, high-frequency applications
Product Lifecycle
Current product, no information on discontinuation or replacement.
Key Reasons to Choose This Product
Excellent efficiency and power density performance
Fast switching speed for high-frequency operation
Low on-state resistance for low power losses
Robust design with high avalanche ruggedness and ESD capability
Proven CoolMOS C7 technology for reliable, high-performance power conversion