Manufacturer Part Number
IPW90R800C3
Manufacturer
Infineon Technologies
Introduction
The IPW90R800C3 is a high-performance, N-Channel MOSFET from Infineon Technologies designed for a wide range of power conversion applications.
Product Features and Performance
900V Drain-Source Voltage (Vdss)
800mΩ Maximum On-State Resistance (Rds(on))
9A Continuous Drain Current (ID) at 25°C
Low Input Capacitance (Ciss) of 1100pF
Low Gate Charge (Qg) of 42nC
Wide Operating Temperature Range of -55°C to 150°C
Product Advantages
Excellent power handling capability
High voltage operation
Low switching and conduction losses
Robust and reliable performance
Key Technical Parameters
Vdss: 900V
Vgs(max): ±20V
Rds(on) (max): 800mΩ @ 4.1A, 10V
Id (continuous): 6.9A at 25°C
Ciss (max): 1100pF @ 100V
Power Dissipation (max): 104W at Tc
Quality and Safety Features
RoHS3 compliant
Qualified to AEC-Q101 automotive standard
Compatibility
Suitable for use in a wide range of power conversion applications, including AC/DC and DC/DC converters, inverters, and motor drives.
Application Areas
Switch-mode power supplies
Uninterruptible power supplies (UPS)
Industrial motor drives
Renewable energy systems
Welding equipment
Product Lifecycle
The IPW90R800C3 is an active product and is not nearing discontinuation. Replacements and upgrades are available from Infineon.
Key Reasons to Choose This Product
High voltage and current handling capabilities
Excellent efficiency and low power losses
Robust and reliable performance
Automotive-grade quality and safety
Broad range of applications
