Manufacturer Part Number
IPW60R190P6
Manufacturer
Infineon Technologies
Introduction
High-performance N-Channel MOSFET for power conversion and motor drive applications
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 600V
On-state Resistance (Rds(on)) of 190mΩ
Continuous Drain Current (Id) of 20.2A at 25°C
Input Capacitance (Ciss) of 1750pF at 100V
Power Dissipation (Ptot) of 151W at Tc
Product Advantages
Low on-state resistance for high efficiency
High voltage rating for wide range of applications
High current capability for demanding power requirements
Low input capacitance for fast switching
Key Technical Parameters
Vdss: 600V
Vgs (Max): ±20V
Rds(on) (Max): 190mΩ @ 7.6A, 10V
Id (Tc): 20.2A
Ciss (Max): 1750pF @ 100V
Ptot (Max): 151W (Tc)
Quality and Safety Features
MOSFET technology for reliable performance
Operating temperature range of -55°C to 150°C
RoHS-compliant package
Compatibility
Through-hole mounting (PG-TO247 package)
Compatible with various power conversion and motor drive applications
Application Areas
Power supplies
Inverters
Motor drives
Industrial automation
Renewable energy systems
Product Lifecycle
This product is currently in active production
Replacement or upgrade options may be available from Infineon
Key Reasons to Choose This Product
High voltage and current capabilities for demanding applications
Low on-state resistance for efficient power conversion
Fast switching performance due to low input capacitance
Reliable and safe operation across a wide temperature range
Widely compatible with various power electronics systems