Manufacturer Part Number
IPU60R1K0CE
Manufacturer
Infineon Technologies
Introduction
This product is a high-performance N-channel power MOSFET from the CoolMOS series by Infineon Technologies.
Product Features and Performance
Operates over a wide temperature range of -40°C to 150°C (junction temperature)
Supports a drain-to-source voltage up to 600V
Provides a low on-resistance of 1 ohm @ 1.5A, 10V
Features a high continuous drain current of 6.8A (at 25°C case temperature)
Offers an input capacitance of 280 pF (max.) at 100V drain-to-source voltage
Supports a maximum power dissipation of 61W (at 25°C case temperature)
Product Advantages
Excellent performance and efficiency due to CoolMOS technology
Robust and reliable operation over a wide temperature range
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±20V
Threshold Voltage (Vgs(th)): 3.5V (max.) @ 130A drain current
On-Resistance (Rds(on)): 1 ohm (max.) @ 1.5A, 10V
Input Capacitance (Ciss): 280 pF (max.) @ 100V
Quality and Safety Features
RoHS3 compliant
Packaged in a PG-TO251-3 (TO-251-3 short leads, IPak, TO-251AA) package
Compatibility
This power MOSFET is suitable for a wide range of high-voltage, high-power applications, including power supplies, motor drives, and industrial electronics.
Application Areas
Switched-mode power supplies
Motor drives
Industrial electronics
Telecommunications equipment
Automotive electronics
Product Lifecycle
The IPU60R1K0CE is an active product in Infineon's portfolio. There are currently no plans for discontinuation, and replacement or upgrade options are available if needed.
Key Reasons to Choose This Product
Excellent performance and efficiency with CoolMOS technology
Wide operating temperature range of -40°C to 150°C
High voltage rating of 600V and low on-resistance for high-power applications
Robust and reliable design for industrial and automotive use
RoHS3 compliance for environmental responsibility
