Manufacturer Part Number
IPS65R1K4C6
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Products
Transistors FETs, MOSFETs Single
Product Features and Performance
RoHS3 Compliant
Manufacturer's packaging: PG-TO251-3
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: PG-TO251-3
Series: CoolMOS C6
Package: Bulk
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Technology: MOSFET (Metal Oxide)
Current Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
Power Dissipation (Max): 28W (Tc)
FET Type: N-Channel
Vgs(th) (Max) @ Id: 3.5V @ 100A
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Mounting Type: Through Hole
Product Advantages
High voltage capability (650V)
Low on-resistance (1.4Ohm)
High current capability (3.2A)
Wide temperature range (-55°C to 150°C)
RoHS3 compliant
Key Technical Parameters
Drain to Source Voltage (Vdss): 650 V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Current Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Power Dissipation (Max): 28W (Tc)
Quality and Safety Features
RoHS3 Compliant
Compatibility
Through Hole Mounting
Application Areas
Suitable for a wide range of power electronics applications, such as switched-mode power supplies, motor drives, and industrial automation.
Product Lifecycle
Currently available, no known plans for discontinuation.
Several Key Reasons to Choose This Product
High voltage capability (650V) suitable for demanding applications
Low on-resistance (1.4Ohm) for efficient power conversion
High current capability (3.2A) for high-power designs
Wide temperature range (-55°C to 150°C) for reliable operation in harsh environments
RoHS3 compliance for use in environmentally-conscious applications