Manufacturer Part Number
IPP60R040C7XKSA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET designed for high-frequency switching applications
Product Features and Performance
600V breakdown voltage
40mΩ on-resistance (max)
50A continuous drain current at 25°C
Low input capacitance of 4340pF
227W maximum power dissipation
Wide operating temperature range of -55°C to 150°C
Product Advantages
Efficient switching performance
Low conduction and switching losses
Compact TO-220 package
Suitable for high-frequency applications
Key Technical Parameters
Drain-source voltage (Vdss): 600V
Maximum gate-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 40mΩ
Continuous drain current (Id): 50A
Input capacitance (Ciss): 4340pF
Power dissipation (max): 227W
Quality and Safety Features
RoHS3 compliant
Proven CoolMOS C7 technology
Compatibility
Suitable for a variety of high-frequency power conversion applications
Application Areas
Switch-mode power supplies
Motor drives
Uninterruptible power supplies (UPS)
Renewable energy systems
Product Lifecycle
This product is currently in production and not nearing discontinuation
Replacement or upgraded parts may become available in the future
Key Reasons to Choose This Product
Excellent efficiency and low losses for high-frequency operation
Compact TO-220 package for space-constrained designs
Wide operating temperature range for demanding applications
Robust and reliable performance with CoolMOS C7 technology
RoHS3 compliance for environmental responsibility
IPP600N25N3GXKSA1