Manufacturer Part Number
IPP220N25NFDAKSA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET with low on-resistance and high power handling capability.
Product Features and Performance
MOSFET (Metal Oxide) technology
N-Channel FET
250V drain-source voltage
61A continuous drain current at 25°C
22mΩ maximum on-resistance at 10V gate-source voltage
7076pF maximum input capacitance at 125V drain-source voltage
300W maximum power dissipation at 25°C case temperature
-55°C to 175°C operating temperature range
Product Advantages
Efficient power conversion with low conduction losses
Suitable for high-power applications
Robust design with high voltage and current handling capability
Compact TO-220-3 package
Key Technical Parameters
Drain-Source Voltage (Vdss): 250V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 22mΩ @ 61A, 10V
Drain Current (Id): 61A (at 25°C)
Input Capacitance (Ciss): 7076pF @ 125V
Power Dissipation (Ptot): 300W (at 25°C case temperature)
Quality and Safety Features
RoHS3 compliant
Tube packaging
Compatibility
Suitable for a variety of high-power electronic applications, including power supplies, motor drives, and industrial equipment.
Application Areas
Power conversion and control
Motor drives
Industrial power electronics
Automotive electronics
Product Lifecycle
This product is currently in production and readily available.
No discontinuation or replacement plans have been announced.
Key Reasons to Choose This Product
Excellent power handling and efficiency with low on-resistance
Robust design with high voltage and current capabilities
Compact and easy-to-use TO-220-3 package
Suitable for a wide range of high-power applications
Reliable performance and quality with RoHS compliance
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