Manufacturer Part Number
IPP110N20N3GXKSA1
Manufacturer
Infineon Technologies
Introduction
The IPP110N20N3GXKSA1 is a high-performance N-channel MOSFET from Infineon Technologies, designed for a wide range of power electronics applications.
Product Features and Performance
200V drain-source voltage
11mOhm maximum on-resistance
88A continuous drain current
Wide operating temperature range (-55°C to 175°C)
Low input capacitance (7100pF) for fast switching
High power dissipation capability (300W)
Product Advantages
Excellent efficiency and thermal performance
Robust design for reliable operation
Suitable for high-power, high-frequency applications
Compatible with various control circuits and gate drivers
Key Technical Parameters
Drain-Source Voltage (Vdss): 200V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 11mOhm
Continuous Drain Current (Id): 88A
Input Capacitance (Ciss): 7100pF
Power Dissipation (Tc): 300W
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Robust package design for mechanical and thermal stress
Compatibility
Compatible with various power electronics circuits and control systems
Application Areas
Switch-mode power supplies
Motor drives
Inverters and converters
Industrial and automotive electronics
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacement or upgraded models may be available in the future.
Key Reasons to Choose This Product
High efficiency and thermal performance for improved system reliability
Robust design for reliable operation in demanding applications
Suitable for high-power, high-frequency power electronics systems
Compatibility with various control circuits and gate drivers
RoHS3 compliance for environmental sustainability
IPP111N15N3INFIONE