Manufacturer Part Number
IPP100P03P3L-04
Manufacturer
Infineon Technologies
Introduction
This is a P-channel MOSFET transistor from Infineon Technologies' OptiMOS series. It is designed for high-power and high-efficiency applications.
Product Features and Performance
100A continuous drain current at 25°C case temperature
30V drain-to-source voltage rating
3mΩ maximum on-resistance at 80A, 10V
Wide operating temperature range of -55°C to 175°C
Low input capacitance of 9300pF at 25V
200W maximum power dissipation at 25°C case temperature
Fast switching capabilities with a maximum gate charge of 200nC at 10V
Product Advantages
Optimized for high-efficiency power conversion
Excellent thermal performance and power dissipation
Reliable and robust design for demanding applications
Suitable for a wide range of high-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): +5V/-16V
On-Resistance (Rds(on)): 4.3mΩ @ 80A, 10V
Drain Current (Id): 100A @ 25°C
Input Capacitance (Ciss): 9300pF @ 25V
Power Dissipation (Tc): 200W
Quality and Safety Features
Designed and manufactured to high quality and reliability standards
Robust construction for long-term reliable operation
Overcurrent and overtemperature protection features
Compatibility
Suitable for a wide range of high-power, high-efficiency applications
Can be used as a replacement or upgrade for similar MOSFET transistors
Application Areas
Switch-mode power supplies (SMPS)
Motor drives
Inverters
Industrial automation and control
Renewable energy systems
Product Lifecycle
This product is currently in active production and availability
Replacements or upgrades may become available in the future as technology evolves
Key Reasons to Choose This Product
Excellent thermal performance and power handling capabilities
Low on-resistance for high efficiency
Fast switching capabilities for high-frequency applications
Robust and reliable design for demanding environments
Compatibility with a wide range of high-power applications