Manufacturer Part Number
IPP072N10N3GXKSA1
Manufacturer
Infineon Technologies
Introduction
The IPP072N10N3GXKSA1 is a high-performance N-channel MOSFET transistor from Infineon Technologies.
Product Features and Performance
Operating temperature range: -55°C to 175°C
Drain-to-source voltage (Vdss): 100V
Maximum gate-to-source voltage (Vgs): ±20V
On-state resistance (Rds(on)): 7.2mΩ @ 80A, 10V
Continuous drain current (Id): 80A @ 25°C
Input capacitance (Ciss): 4910pF @ 50V
Maximum power dissipation: 150W @ 25°C
Product Advantages
Low on-state resistance for high efficiency
Wide operating temperature range
High voltage and current handling capability
Optimized for fast switching applications
Key Technical Parameters
MOSFET technology: N-channel
Threshold voltage (Vgs(th)): 3.5V @ 90A
Gate drive voltage: 6V (max Rds(on)), 10V (min Rds(on))
Gate charge (Qg): 68nC @ 10V
Quality and Safety Features
RoHS3 compliant
PG-TO220-3 package
Compatibility
Through-hole mounting
Application Areas
Switch-mode power supplies
Motor drives
Industrial power electronics
Automotive electronics
Product Lifecycle
Currently in production. No known discontinuation or replacement plans.
Key Reasons to Choose This Product
High efficiency and low power losses due to low on-state resistance
Wide temperature range for demanding applications
Robust design and high voltage/current handling capability
Optimized for fast switching performance