Manufacturer Part Number
IPP065N04NG
Manufacturer
Infineon Technologies
Introduction
The IPP065N04NG is a high-performance N-channel power MOSFET from Infineon Technologies, designed for a wide range of power management applications.
Product Features and Performance
40V drain-to-source voltage
Low on-resistance of 6.5mΩ at 50A, 10V
50A continuous drain current at 25°C
Wide operating temperature range of -55°C to 175°C
Fast switching characteristics with low gate charge of 34nC at 10V
Robust design with a power dissipation of 68W at Tc
Product Advantages
Excellent efficiency and thermal performance
High current handling capability
Reliable operation in harsh environments
Enables compact and high-density power circuit designs
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 6.5mΩ @ 50A, 10V
Continuous Drain Current (Id): 50A @ 25°C
Input Capacitance (Ciss): 2800pF @ 20V
Power Dissipation (Ptot): 68W @ Tc
Quality and Safety Features
RoHS3 compliant
Robust TO-220-3 package design for reliable operation
Compatibility
Compatible with a wide range of power electronic applications, including:
Switch-mode power supplies
Motor drives
Inverters
DC-DC converters
Application Areas
Power management
Industrial automation
Renewable energy systems
Automotive electronics
Product Lifecycle
The IPP065N04NG is an active product in Infineon's portfolio and is not nearing discontinuation. Replacement or upgrade options may be available as technology evolves.
Key Reasons to Choose This Product
Excellent efficiency and thermal performance for high-power applications
Robust design and wide operating temperature range for reliable operation
Fast switching characteristics for high-frequency power conversion
Compact and high-density design enabled by low on-resistance
Proven reliability and quality from Infineon Technologies
