Manufacturer Part Number
IPP045N10N3G
Manufacturer
Infineon Technologies
Introduction
This product is a high-performance N-channel MOSFET transistor from the OptiMOS 3 series.
Product Features and Performance
100V drain-to-source voltage rating
Very low on-resistance of 4.5mΩ @ 100A, 10V
High continuous drain current of 137A at 25°C case temperature
Wide operating temperature range of -55°C to 175°C
Low gate charge of 117nC @ 10V
Fast switching capabilities
Product Advantages
Excellent efficiency and power density
Reliable and robust design
Suitable for high-power, high-frequency applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 4.5mΩ @ 100A, 10V
Continuous Drain Current (Id): 137A @ 25°C
Input Capacitance (Ciss): 8410pF @ 50V
Power Dissipation (Tc): 214W
Quality and Safety Features
Robust and reliable design for high-stress applications
Complies with industry safety and quality standards
Compatibility
This MOSFET is compatible with a wide range of high-power, high-frequency applications such as:
Switch-mode power supplies
Motor drives
Power inverters
DC-DC converters
Application Areas
Industrial equipment
Renewable energy systems
Electric vehicles
Telecom power systems
Product Lifecycle
The IPP045N10N3G is an actively supported and available product from Infineon Technologies. There are no plans for discontinuation, and replacement or upgrade options are readily available.
Key Reasons to Choose This Product
Excellent efficiency and power density for high-performance applications
Reliable and robust design for demanding operating conditions
Wide operating temperature range and fast switching capabilities
Compatibility with a broad range of high-power, high-frequency applications
Readily available and actively supported by the manufacturer
