Manufacturer Part Number
IPL60R385CP
Manufacturer
Infineon Technologies
Introduction
The IPL60R385CP is a high-performance N-channel power MOSFET transistor from Infineon Technologies' CoolMOS CP series.
Product Features and Performance
600V drain-to-source voltage (Vdss)
Maximum gate-to-source voltage (Vgs) of ±20V
On-state resistance (Rds(on)) of 385mΩ @ 5.2A and 10V
Continuous drain current (Id) of 9A at 25°C case temperature (Tc)
Input capacitance (Ciss) of 790pF @ 100V
Maximum power dissipation of 83W at Tc
Product Advantages
High-voltage capability for use in various power conversion applications
Low on-state resistance for high efficiency
Fast switching speed and low gate charge for high-frequency operation
Robust design for reliable performance
Key Technical Parameters
MOSFET technology
N-channel
Vdss: 600V
Vgs(max): ±20V
Rds(on) (max): 385mΩ @ 5.2A, 10V
Id (continuous): 9A @ 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount assembly
Compatibility
Compatible with a wide range of power supply and motor control applications
Application Areas
Switching power supplies
Motor drives
Industrial power electronics
Household appliances
Product Lifecycle
Current product offering
Replacements and upgrades may be available in the future
Several Key Reasons to Choose This Product
High-voltage and low on-state resistance for efficient power conversion
Fast switching speed and low gate charge for high-frequency operation
Robust design for reliable performance in various applications
RoHS3 compliance for environmentally-friendly use
