Manufacturer Part Number
IPL60R185P7AUMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel CoolMOS P7 MOSFET with low on-resistance and high avalanche capability
Product Features and Performance
Very low on-resistance of 185 mΩ at 10 V gate drive
Reduced gate charge for improved switching performance
High avalanche energy rating for enhanced ruggedness
Optimized for hard-switching applications
Suitable for high-frequency, high-efficiency power conversion
Product Advantages
Excellent efficiency in hard-switching applications
Robust avalanche capability for enhanced reliability
Fast and efficient switching for high-frequency operation
Optimized for low power loss and reduced cooling requirements
Key Technical Parameters
Drain-to-Source Voltage (VDS): 600 V
Maximum Gate-to-Source Voltage (VGS): ±20 V
Continuous Drain Current (ID) @ 25°C: 19 A
Maximum On-Resistance (RDS(on)): 185 mΩ @ 5.6 A, 10 V
Input Capacitance (Ciss) @ 400 V: 1081 pF
Power Dissipation (Ptot) @ 25°C: 81 W
Quality and Safety Features
RoHS3 compliant
Meets relevant safety and reliability standards
Compatibility
Suitable for a wide range of power conversion applications, including:
- Switching-mode power supplies
- Motor drives
- Induction heating
- Welding equipment
- Renewable energy systems
Application Areas
High-frequency, high-efficiency power conversion
Industrial and consumer electronics
Home appliances
Automotive electronics
Product Lifecycle
Current product offering, no discontinuation planned
Replacement and upgrade options available as technology evolves
Key Reasons to Choose This Product
Excellent efficiency and low power loss for improved system performance
Robust avalanche capability for enhanced reliability and ruggedness
Fast and efficient switching for high-frequency, high-density power conversion
Optimized for low cooling requirements and compact design
Broad compatibility and suitability for a wide range of applications
IPL60R199CPADI (Analog Devices, Inc.)