Manufacturer Part Number
IPI65R600C6
Manufacturer
Infineon Technologies
Introduction
Discrete semiconductor product
Single transistor FET, MOSFET
Product Features and Performance
ROHS3 compliant
Through-hole mounting
TO-262-3 long leads, IPak, TO-262AA package
CoolMOS series
Operating temperature: -55°C to 150°C
Drain-to-source voltage (Vdss): 650V
Maximum gate-to-source voltage (Vgs): ±20V
Maximum on-resistance (Rds(on)): 600mΩ @ 2.1A, 10V
MOSFET technology
Maximum continuous drain current (Id): 7.3A @ 25°C
Maximum input capacitance (Ciss): 440pF @ 100V
Maximum power dissipation: 63W @ Tc
Product Advantages
High voltage capability
Low on-resistance
High temperature operation
Key Technical Parameters
Drain-to-source voltage (Vdss): 650V
Gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 600mΩ @ 2.1A, 10V
Continuous drain current (Id): 7.3A @ 25°C
Input capacitance (Ciss): 440pF @ 100V
Power dissipation: 63W @ Tc
Quality and Safety Features
ROHS3 compliant
Compatibility
Through-hole mounting
TO-262-3 package
Application Areas
Suitable for high voltage, high power applications
Product Lifecycle
Current product, no information on discontinuation or replacements
Key Reasons to Choose This Product
High voltage capability up to 650V
Low on-resistance for efficient power conversion
High temperature operation up to 150°C
Robust MOSFET technology
Suitable for high power applications
