Manufacturer Part Number
IPD50N03S2-07
Manufacturer
Infineon Technologies
Introduction
The IPD50N03S2-07 is a high-performance N-channel MOSFET transistor from Infineon Technologies.
Product Features and Performance
High-power MOSFET with low on-resistance
Capable of handling continuous drain current of up to 50A at 25°C
Able to withstand a maximum drain-to-source voltage of 30V
Operates within a wide temperature range of -55°C to 175°C
Product Advantages
Excellent power handling and thermal performance
Reliable and durable construction
Optimized for efficient power conversion applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 7.3mΩ @ 50A, 10V
Continuous Drain Current (Id): 50A @ 25°C
Input Capacitance (Ciss): 2000pF @ 25V
Power Dissipation (Ptot): 136W @ Tc
Quality and Safety Features
Meets high-reliability standards for industrial and automotive applications
Robust design for enhanced durability and performance
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switched-mode power supplies
Motor drives
Inverters
Industrial and automotive electronics
Product Lifecycle
This product is currently in production and readily available
No information on planned discontinuation or availability of replacements/upgrades
Key Reasons to Choose This Product
High-performance MOSFET with excellent power handling and thermal capabilities
Low on-resistance for efficient power conversion
Reliable and durable construction for long-term operation
Optimized for a variety of industrial and automotive applications
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