Manufacturer Part Number
IPD14N06S2-80
Manufacturer
Infineon Technologies
Introduction
The IPD14N06S2-80 is a high-performance N-Channel MOSFET transistor suitable for a wide range of power electronics and switching applications.
Product Features and Performance
Operating temperature range of -55°C to 175°C (TJ)
Drain-to-Source voltage (Vdss) of 55V
Maximum gate-to-source voltage (Vgs) of ±20V
Low on-resistance (Rds(on)) of 80mΩ at 7A and 10V
Continuous drain current (Id) of 17A at 25°C (Tc)
Input capacitance (Ciss) of 293pF at 25V
Maximum power dissipation of 47W at 25°C (Tc)
N-Channel MOSFET technology
Product Advantages
Excellent performance in power switching and control applications
Wide operating temperature range for versatile use
Low on-resistance for low power loss and high efficiency
High current handling capability
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 55V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 80mΩ @ 7A, 10V
Continuous Drain Current (Id): 17A @ 25°C (Tc)
Input Capacitance (Ciss): 293pF @ 25V
Power Dissipation (Max): 47W @ 25°C (Tc)
Quality and Safety Features
Robust and reliable design for industrial and automotive applications
Compliance with relevant safety and quality standards
Compatibility
Suitable for a wide range of power electronics and switching applications
Application Areas
Power supplies
Motor drives
DC-DC converters
Lighting ballasts
Industrial and automotive electronics
Product Lifecycle
Current production model, no plans for discontinuation
Replacement or upgraded models may become available in the future
Key Reasons to Choose This Product
Excellent performance characteristics, including high voltage, current, and power handling capabilities
Low on-resistance for high efficiency and low power loss
Wide operating temperature range for versatile applications
Robust and reliable design for industrial and automotive use
Compatibility with a wide range of power electronics and switching applications
