Manufacturer Part Number
IPD135N08N3GATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-Channel MOSFET transistor with excellent efficiency and power density
Product Features and Performance
80V Drain-Source Voltage
45A Continuous Drain Current
Low On-Resistance of 13.5mΩ
Fast Switching Characteristics
Optimized Charge Dynamics for Efficient Power Conversion
Robust Design for Reliable Operation
Product Advantages
Excellent Power Density and Efficiency
High Current Handling Capability
Low On-Resistance for Reduced Conduction Losses
Reliable Performance in Demanding Applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 80V
Gate-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 45A
On-Resistance (Rds(on)): 13.5mΩ
Input Capacitance (Ciss): 1730pF
Power Dissipation (Ptot): 79W
Quality and Safety Features
RoHS3 Compliant
Robust Design for Reliable Operation
Meets Stringent Quality and Safety Standards
Compatibility
Compatible with a wide range of power electronics and power conversion applications
Application Areas
Switching Power Supplies
Motor Drives
Power Inverters
Uninterruptible Power Supplies (UPS)
Industrial and Automotive Electronics
Product Lifecycle
This product is currently in active production and is not nearing discontinuation.
Replacement or upgraded models may become available in the future as technology advances.
Several Key Reasons to Choose This Product
Excellent power density and efficiency for improved system performance
High current handling capability for demanding applications
Low on-resistance for reduced conduction losses and improved energy efficiency
Reliable and robust design for long-term, dependable operation
Compatibility with a wide range of power electronics applications
IPD135N03LIPD135N03L