IPD100N04S402ATMA1 - Infineon Technologies

Manufacturer Part Number

IPD100N04S402ATMA1

Manufacturer

Infineon Technologies

Introduction

This is a single N-channel MOSFET device from the OptiMOS series by Infineon Technologies.

Product Features and Performance

40V drain-to-source voltage rating

100A continuous drain current rating at 25°C

Very low on-resistance of 2mΩ

High input capacitance of 9430pF

Power dissipation capability of 150W

Wide operating temperature range of -55°C to 175°C

Product Advantages

Optimized performance for high-current power conversion applications

Ultra-low on-resistance for high efficiency

Compact DPak (TO-252-3) package

Suitable for surface mount assembly

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 40V

Maximum Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 2mΩ @ 100A, 10V

Continuous Drain Current (Id): 100A @ 25°C

Input Capacitance (Ciss): 9430pF @ 25V

Power Dissipation (Ptot): 150W @ Tc

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified for automotive applications

Compatibility

This MOSFET is compatible with standard MOSFET drivers and can be used in a wide range of power conversion applications.

Application Areas

Switch-mode power supplies

Inverters

Motor drives

Power converters

Battery management systems

Product Lifecycle

This product is an active and widely available part from Infineon Technologies. There are no plans for discontinuation, and replacement or upgrade options are readily available.

Key Reasons to Choose This Product

Excellent power handling capability with 100A continuous drain current and 150W power dissipation

Ultra-low on-resistance of 2mΩ for high efficiency

Compact DPak (TO-252-3) surface mount package for space-constrained designs

Wide operating temperature range of -55°C to 175°C for versatile applications

RoHS3 compliance and AEC-Q101 automotive qualification for reliable performance