Manufacturer Part Number
IPD082N10N3GATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor with low on-resistance and high current carrying capability.
Product Features and Performance
Low on-resistance of 8.2mΩ @ 73A, 10V
Continuous drain current of 80A at 25°C case temperature
100V drain-to-source voltage rating
Wide operating temperature range of -55°C to 175°C
Fast switching characteristics with low gate charge of 55nC @ 10V
Optimized for efficient power conversion and motor control applications
Product Advantages
Excellent RDS(on) performance for high efficiency
High current handling capability
Wide voltage and temperature operating range
Fast switching for high-frequency applications
Compact DPak (TO-252-3) package
Key Technical Parameters
Drain-to-Source Voltage (VDS): 100V
Maximum Gate-to-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 8.2mΩ @ 73A, 10V
Continuous Drain Current (ID): 80A @ 25°C
Input Capacitance (Ciss): 3980pF @ 50V
Power Dissipation (Tc): 125W
Quality and Safety Features
ROHS3 compliant
ESD protection
Rugged design for reliable operation
Compatibility
Suitable for a wide range of power conversion, motor control, and other high-current, high-voltage applications.
Application Areas
Switched-mode power supplies (SMPS)
Motor drives
Inverters
Power factor correction (PFC) circuits
Industrial automation and control systems
Product Lifecycle
This product is currently available and is not nearing discontinuation. Replacement or upgrade options may be available from Infineon or other manufacturers.
Key Reasons to Choose This Product
Excellent efficiency and power density performance
High current handling capability
Wide operating voltage and temperature range
Fast switching for high-frequency applications
Compact and reliable DPak (TO-252-3) package
Strong technical support and product availability from Infineon
