Manufacturer Part Number
IPD075N03LGATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET optimized for high-power density applications
Product Features and Performance
Robust and reliable MOSFET transistor
Suitable for use in high-power density applications
Excellent thermal and electrical characteristics
Low on-resistance for improved efficiency
Fast switching speed for high-frequency operation
Product Advantages
Optimized for high-power density applications
Excellent thermal and electrical performance
Low on-resistance for improved efficiency
Fast switching speed for high-frequency operation
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 7.5mΩ @ 30A, 10V
Continuous Drain Current (Id): 50A (at 25°C)
Input Capacitance (Ciss): 1900pF @ 15V
Power Dissipation (Tc): 47W
Quality and Safety Features
RoHS3 compliant
Reliable and robust design
Compatibility
TO-252-3, DPak (2 Leads + Tab), SC-63 package
Suitable for surface mount applications
Application Areas
High-power density applications
Switching power supplies
Motor drives
Industrial and consumer electronics
Product Lifecycle
Current product, no discontinuation planned
Replacements and upgrades available
Key Reasons to Choose This Product
Optimized for high-power density applications
Excellent thermal and electrical performance
Low on-resistance for improved efficiency
Fast switching speed for high-frequency operation
Robust and reliable design
RoHS3 compliant