Manufacturer Part Number
IPD042P03L3GATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance P-channel power MOSFET
Part of the OptiMOS series
Product Features and Performance
30V Drain-to-Source Voltage (Vdss)
±20V Gate-to-Source Voltage (Vgs)
2mΩ Maximum On-Resistance (Rds(on)) at 70A, 10V
70A Continuous Drain Current (Id) at 25°C (Tc)
150W Maximum Power Dissipation (Tc)
Wide Operating Temperature Range: -55°C to 175°C (TJ)
Low Input Capacitance (Ciss): 12400pF at 15V
Fast Switching Performance
Product Advantages
Optimized for high-efficiency power conversion
Excellent thermal management
Robust design for harsh environments
Suitable for a wide range of power applications
Key Technical Parameters
MOSFET Technology: Metal Oxide
FET Type: P-Channel
Vgs(th) (Max): 2V at 270A
Drive Voltage (Max Rds(on), Min Rds(on)): 4.5V, 10V
Gate Charge (Qg) (Max): 175nC at 10V
Quality and Safety Features
RoHS3 Compliant
Reliable and durable construction
Compatibility
Compatible with a wide range of power electronics and power conversion applications
Application Areas
Switch-mode power supplies
Motor drives
Lighting control systems
Industrial automation and control
Automotive electronics
Product Lifecycle
Current production model
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
Excellent performance and efficiency
Robust design for reliable operation
Wide range of applications
Compatibility with various power electronics systems
Compliance with industry standards and regulations
