Manufacturer Part Number
IPD038N06N3GATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance power MOSFET in TO-252-3 (DPak) package
Part of the OptiMOS series
Product Features and Performance
60V drain-source voltage
90A continuous drain current at 25°C
8mΩ maximum on-resistance at 90A, 10V
Wide operating temperature range of -55°C to 175°C
Low input capacitance of 8000pF at 30V
High power dissipation of 188W at Tc
Product Advantages
Optimized for high-efficiency power conversion applications
Excellent thermal performance
Compact and robust TO-252-3 (DPak) package
Key Technical Parameters
Drain-Source Voltage (VDS): 60V
Gate-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 3.8mΩ @ 90A, 10V
Continuous Drain Current (ID): 90A @ 25°C
Input Capacitance (Ciss): 8000pF @ 30V
Power Dissipation (Pd): 188W @ Tc
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount assembly
Compatibility
Suitable for a wide range of power conversion applications, such as DC-DC converters, motor drives, and power supplies
Application Areas
High-efficiency power conversion
Industrial and consumer electronics
Automotive and transportation
Product Lifecycle
This product is an active part and not nearing discontinuation
Replacement and upgrade options are available
Several Key Reasons to Choose This Product
Excellent performance and efficiency
Robust and reliable design
Wide operating temperature range
Compact and easy-to-use package
Suitable for a variety of power conversion applications
IPD039N03LGINENOI