Manufacturer Part Number
IPB80N08S2L07ATMA1
Manufacturer
Infineon Technologies
Introduction
The IPB80N08S2L07ATMA1 is a high-performance N-channel MOSFET from Infineon Technologies, designed for a wide range of power electronics applications.
Product Features and Performance
75V Drain-to-Source Voltage (Vdss)
8mΩ maximum On-Resistance (Rds(on))
80A Continuous Drain Current (Id)
300W maximum Power Dissipation (Tc)
Wide Operating Temperature Range: -55°C to 175°C
Product Advantages
Optimized for high-efficiency power conversion
Low conduction losses for improved energy efficiency
Robust and reliable design for industrial applications
Surface-mount package for compact board layouts
Key Technical Parameters
Vgs(th) (Max) @ Id: 2V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Quality and Safety Features
RoHS3 Compliant
AEC-Q101 qualified for automotive applications
Compatibility
TO-263-3, DPak (2 Leads + Tab), TO-263AB package
Suitable for surface-mount assembly
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial automation and control
Automotive electronics
Product Lifecycle
Current product
Replacement parts and upgrades available
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
Robust and reliable design for industrial and automotive applications
Compact surface-mount package for space-constrained designs
Wide operating temperature range for versatile use
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