Manufacturer Part Number
IPB64N25S320ATMA1
Manufacturer
Infineon Technologies
Introduction
High performance N-channel MOSFET transistor with optimized on-state resistance and fast switching characteristics. Designed for use in high-power, high-efficiency power conversion applications.
Product Features and Performance
250V Drain-Source Voltage
64A Continuous Drain Current
20mΩ On-State Resistance
Fast switching with low gate charge
Optimized for low conduction and switching losses
Wide operating temperature range of -55°C to 175°C
Product Advantages
Excellent power density and efficiency
Robust design for reliable operation
Reduced system size and weight
Key Technical Parameters
Vdss: 250V
Vgs(max): ±20V
Rds(on): 20mΩ @ 64A, 10V
Id (continuous): 64A @ 25°C
Ciss: 7000pF @ 25V
Power Dissipation: 300W
Quality and Safety Features
RoHS3 compliant
Robust package design for reliable operation
Compatibility
Surface mount TO-263-3 (D-Pak) package
Application Areas
High-power, high-efficiency power conversion applications
Industrial motor drives
Switched-mode power supplies
Inverters and converters
Product Lifecycle
Current product, no discontinuation planned
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent power density and efficiency
Robust design for reliable operation
Wide operating temperature range
Fast switching with low gate charge
Optimized for low conduction and switching losses
IPB60R380P6INFNEON