Manufacturer Part Number
IPB47N10SL-26
Manufacturer
Infineon Technologies
Introduction
N-Channel Power MOSFET with low on-resistance
Product Features and Performance
Drain-Source Voltage (Vdss) up to 100V
Extremely low on-resistance (Rds(on)) of 26mΩ
Continuous Drain Current (Id) of 47A at 25°C
Wide operating temperature range of -55°C to 175°C
Low gate charge (Qg) of 135nC
Product Advantages
Excellent efficiency and power density
Robust and reliable performance
Compact surface mount package
Key Technical Parameters
Vdss: 100V
Vgs(max): ±20V
Rds(on) (max): 26mΩ @ 33A, 10V
Id (continuous): 47A at 25°C
Ciss (max): 2500pF @ 25V
Power Dissipation (max): 175W
Quality and Safety Features
Meets stringent quality and reliability standards
Designed for high-performance and safety-critical applications
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switching power supplies
Motor drives
Industrial automation and control
Electric vehicles and renewable energy systems
Product Lifecycle
Currently in active production
No discontinuation or replacement plans announced
Key Reasons to Choose This Product
Excellent efficiency and power density
Robust and reliable performance in demanding applications
Compact surface mount package for space-constrained designs
Wide operating temperature range for diverse use cases
Cost-effective solution for high-performance power electronics