Manufacturer Part Number
IPB320N20N3GATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET in DPak (TO-263-3) package
Part of the OptiMOS series
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 200V
Maximum Drain-to-Source Voltage (Vgs) of ±20V
On-State Resistance (Rds(on)) of 32mΩ @ 34A, 10V
Continuous Drain Current (Id) of 34A at 25°C
Input Capacitance (Ciss) of 2350pF @ 100V
Maximum Power Dissipation of 136W at Tc
Gate Charge (Qg) of 29nC @ 10V
Product Advantages
Optimized for high-efficiency power conversion
Low on-state resistance for low conduction losses
High power density and thermal performance
Suitable for a wide range of applications
Key Technical Parameters
MOSFET Technology: N-Channel
Threshold Voltage (Vgs(th)) of 4V @ 90A
Drive Voltage Range: 10V (Max Rds(on), Min Rds(on))
Operating Temperature Range: -55°C to 175°C
Quality and Safety Features
RoHS3 Compliant
Automotive-grade quality and reliability
Compatibility
Surface mount package (TO-263-3, DPak)
Compatible with a wide range of power electronic applications
Application Areas
Switched-mode power supplies
Motor drives
Industrial and household appliances
Telecom and server power
Product Lifecycle
Currently in active production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High efficiency and low conduction losses
Robust and reliable performance
Versatile package and mounting options
Suitable for a wide range of power electronics applications
Automotive-grade quality and compliance with industry standards
IPB25N06S3-22INENOI