Manufacturer Part Number
IPB180N03S4L-H0
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor for power electronics applications
Product Features and Performance
Supports high current up to 180A continuous at 25°C
Low on-resistance of 0.95 mΩ for high efficiency
High voltage rating up to 30V
Wide operating temperature range of -55°C to 175°C
Fast switching capability with low gate charge of 300 nC
Product Advantages
Excellent thermal performance
High power density
Reliable and robust design
Optimized for high-frequency switching applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Maximum Gate-Source Voltage (Vgs): ±16V
On-Resistance (Rds(on)): 0.95 mΩ
Continuous Drain Current (Id): 180A
Input Capacitance (Ciss): 23000 pF
Power Dissipation (Tc): 250W
Quality and Safety Features
Compliance with industry standards
Robust and reliable design for long-term durability
Rigorous testing and quality control measures
Compatibility
Suitable for a wide range of power electronics applications, including:
Motor drives
Switched-mode power supplies
Power inverters
Welding equipment
Industrial automation and control systems
Application Areas
High-efficiency power conversion
High-power and high-current applications
Industrial and commercial equipment
Renewable energy systems
Product Lifecycle
The IPB180N03S4L-H0 is an active and widely available product from Infineon Technologies. There are no indications of it being discontinued in the near future, and suitable replacement or upgrade options may be available.
Several Key Reasons to Choose This Product
Excellent thermal performance and high power density for efficient power conversion
Reliable and robust design for long-term durability and operation
Optimized for high-frequency switching applications with fast switching capability
Wide operating temperature range for versatile use in various environments
Compatibility with a wide range of power electronics applications
