Manufacturer Part Number
IPB05N03LA
Manufacturer
Infineon Technologies
Introduction
This is a discrete semiconductor product, specifically a transistor - FET, MOSFET - Single.
Product Features and Performance
N-Channel MOSFET
25V Drain to Source Voltage (Vdss)
±20V Gate to Source Voltage (Vgs)
6mOhm Maximum Drain to Source On-Resistance (Rds On) at 55A, 10V
80A Continuous Drain Current (Id) at 25°C
3110pF Maximum Input Capacitance (Ciss) at 15V
94W Maximum Power Dissipation at Tc
Product Advantages
High power density
Low on-resistance
Compact surface mount package
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
Package: TO-263-3, DPak (2 Leads + Tab), TO-263AB
Operating Temperature: -55°C to 175°C (TJ)
Vgs(th) Max: 2V at 50A
Drive Voltage: 4.5V (Max Rds On), 10V (Min Rds On)
Gate Charge (Qg) Max: 25nC at 5V
Quality and Safety Features
RoHS non-compliant
Compatibility
Compatible with surface mount applications
Application Areas
Suitable for use in power management, motor control, and other high-power applications
Product Lifecycle
This product is currently available and not nearing discontinuation.
Key Reasons to Choose This Product
High power handling capability
Low on-resistance for improved efficiency
Compact surface mount package for space-constrained designs
Wide operating temperature range for demanding applications
IPB065N06LINFINEO