Manufacturer Part Number
IPB034N06L3GATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance power MOSFET with ultra-low on-state resistance for efficient power conversion
Product Features and Performance
Extremely low on-resistance for reduced power losses and high efficiency
Wide operating temperature range of -55°C to 175°C
Robust and reliable design for demanding applications
Excellent switching characteristics for fast and efficient power conversion
Product Advantages
Optimized for high-efficiency power conversion
Compact and space-saving surface mount package
Reliable performance in high-temperature environments
Suitable for a wide range of power electronics applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 60V
Maximum Gate-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 3.4mΩ @ 90A, 10V
Continuous Drain Current (Id): 90A @ 25°C
Input Capacitance (Ciss): 13000pF @ 30V
Power Dissipation (Tc): 167W
Quality and Safety Features
RoHS3 compliant
Robust and reliable design for demanding applications
Compatibility
Compatible with a wide range of power electronics applications
Application Areas
Highly efficient power conversion in industrial, automotive, and consumer electronics applications
Suitable for use in inverters, converters, motor drives, and other power electronics systems
Product Lifecycle
This product is an active and current offering from Infineon Technologies
Replacements and upgrades may be available in the future as technology evolves
Key Reasons to Choose This Product
Extremely low on-resistance for high-efficiency power conversion
Wide operating temperature range and robust design for demanding applications
Compact and space-saving surface mount package for easy integration
Reliable performance and quality features for long-term reliability
Suitable for a wide range of power electronics applications