Manufacturer Part Number
IPA90R800C3
Manufacturer
Infineon Technologies
Introduction
The IPA90R800C3 is a high-voltage N-channel MOSFET from Infineon Technologies' CoolMOS series, designed for a wide range of power conversion applications.
Product Features and Performance
900V drain-to-source voltage
800mOhm on-resistance at 10V gate-source voltage
9A continuous drain current at 25°C case temperature
1100pF input capacitance at 100V drain-source voltage
33W maximum power dissipation at Tc
Product Advantages
High voltage and low on-resistance for efficient power conversion
Fast switching speed and low gate charge for high-frequency operation
Robust design for reliable performance in demanding applications
Key Technical Parameters
Drain-to-source voltage: 900V
Gate-to-source voltage: ±20V
On-resistance: 800mOhm
Drain current: 6.9A
Input capacitance: 1100pF
Power dissipation: 33W
Quality and Safety Features
RoHS3 compliant
TO-220 full pack packaging for reliable thermal management
Compatibility
The IPA90R800C3 is a standalone MOSFET that can be used in a wide range of power conversion and control applications.
Application Areas
Switch-mode power supplies
Motor drives
Inductive heating
Lighting ballasts
Industrial automation and control
Product Lifecycle
The IPA90R800C3 is an active product and is currently available from Infineon Technologies. There are no immediate plans for discontinuation, and suitable replacement or upgrade options may be available.
Key Reasons to Choose This Product
High voltage and low on-resistance for efficient power conversion
Fast switching speed and low gate charge for high-frequency operation
Robust design for reliable performance in demanding applications
RoHS3 compliance and full pack packaging for quality and safety
Compatibility with a wide range of power conversion and control applications
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