Manufacturer Part Number
IPA60R380P6
Manufacturer
Infineon Technologies
Introduction
High-voltage, high-performance N-channel MOSFET for power electronics applications
Product Features and Performance
600V operating voltage
380mΩ on-resistance
6A continuous drain current
31W power dissipation
-55°C to 150°C operating temperature range
Fast switching with low gate charge
Product Advantages
Excellent efficiency and power density
Robust and reliable design
Suitable for high-voltage applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 380mΩ
Continuous Drain Current (Id): 10.6A
Input Capacitance (Ciss): 877pF
Power Dissipation (Tc): 31W
Quality and Safety Features
Robust TO-220 package
High junction temperature rating
Compliant with industry safety standards
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Lighting ballasts
Uninterruptible power supplies (UPS)
Renewable energy inverters
Product Lifecycle
This product is an active and widely available MOSFET solution
Replacement or upgrade options may be available from Infineon or other manufacturers
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-resistance for improved efficiency
Robust and reliable design for demanding applications
Suitable for a wide range of power electronics applications
Availability and support from a leading semiconductor manufacturer (Infineon Technologies)
