IPA60R080P7XKSA1 - Infineon Technologies

Manufacturer Part Number

IPA60R080P7XKSA1

Manufacturer

Infineon Technologies

Introduction

The IPA60R080P7XKSA1 is a high-performance N-channel MOSFET transistor from Infineon Technologies, designed for a wide range of power electronics and power conversion applications.

Product Features and Performance

High breakdown voltage of 600V

Low on-resistance of 80mΩ

High continuous drain current of 37A at 25°C

Wide operating temperature range of -55°C to 150°C

Fast switching and low gate charge of 51nC

Optimized for high-efficiency power conversion

Product Advantages

Excellent energy efficiency

High reliability and robustness

Compact and easy to integrate

Key Technical Parameters

Drain to Source Voltage (Vdss): 600V

Maximum Gate-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 80mΩ

Continuous Drain Current (Id): 37A

Input Capacitance (Ciss): 2180pF

Power Dissipation (Ptot): 29W

Quality and Safety Features

RoHS3 compliant

Through-hole mounting for secure attachment

Compatibility

This MOSFET is compatible with a wide range of power electronics and power conversion applications, including:

Switch-mode power supplies

Motor drives

Inverters

Power factor correction circuits

Application Areas

Industrial equipment

Household appliances

Renewable energy systems

Automotive electronics

Product Lifecycle

The IPA60R080P7XKSA1 is an active product in Infineon's portfolio and is not nearing discontinuation. Replacement or upgrade options may be available as technology advances.

Key Reasons to Choose This Product

High energy efficiency and low power losses due to the low on-resistance and fast switching capabilities.

Reliable and robust performance across a wide temperature range, ensuring long-term reliability in demanding applications.

Compact and easy to integrate design, simplifying system design and layout.

Excellent compatibility with a wide range of power electronics and power conversion applications, providing design flexibility.