Manufacturer Part Number
IPA60R080P7XKSA1
Manufacturer
Infineon Technologies
Introduction
The IPA60R080P7XKSA1 is a high-performance N-channel MOSFET transistor from Infineon Technologies, designed for a wide range of power electronics and power conversion applications.
Product Features and Performance
High breakdown voltage of 600V
Low on-resistance of 80mΩ
High continuous drain current of 37A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching and low gate charge of 51nC
Optimized for high-efficiency power conversion
Product Advantages
Excellent energy efficiency
High reliability and robustness
Compact and easy to integrate
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 80mΩ
Continuous Drain Current (Id): 37A
Input Capacitance (Ciss): 2180pF
Power Dissipation (Ptot): 29W
Quality and Safety Features
RoHS3 compliant
Through-hole mounting for secure attachment
Compatibility
This MOSFET is compatible with a wide range of power electronics and power conversion applications, including:
Switch-mode power supplies
Motor drives
Inverters
Power factor correction circuits
Application Areas
Industrial equipment
Household appliances
Renewable energy systems
Automotive electronics
Product Lifecycle
The IPA60R080P7XKSA1 is an active product in Infineon's portfolio and is not nearing discontinuation. Replacement or upgrade options may be available as technology advances.
Key Reasons to Choose This Product
High energy efficiency and low power losses due to the low on-resistance and fast switching capabilities.
Reliable and robust performance across a wide temperature range, ensuring long-term reliability in demanding applications.
Compact and easy to integrate design, simplifying system design and layout.
Excellent compatibility with a wide range of power electronics and power conversion applications, providing design flexibility.
