Manufacturer Part Number
IMBF170R1K0M1XTMA1
Manufacturer
Infineon Technologies
Introduction
High-voltage, high-efficiency silicon carbide (SiC) MOSFET in standard TO-263 DPak package
Product Features and Performance
Optimized for industrial and home appliance applications
Low on-state resistance for high efficiency
Fast switching characteristics with low gate charge for high-frequency operation
Robust avalanche capability and high short-circuit withstand time
Product Advantages
High-voltage and high-performance SiC MOSFET
Improved energy efficiency compared to silicon-based devices
Reliable and robust design for industrial and consumer applications
Key Technical Parameters
1700 V drain-to-source voltage
2 A continuous drain current at 25°C
1000 mΩ maximum on-state resistance
-55°C to 175°C operating temperature range
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging for automated assembly
Compatibility
Compatible with standard TO-263 DPak mounting and footprint
Application Areas
Industrial equipment
Home appliances
Power conversion and motor control systems
Product Lifecycle
Current production model
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
High efficiency and performance for power conversion applications
Robust design and reliability for industrial and consumer use
Optimized for high-frequency, high-voltage operations
Seamless integration with existing TO-263 DPak designs
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