Manufacturer Part Number
IKW75N60H3
Manufacturer
Infineon Technologies
Introduction
Infineon Technologies' IKW75N60H3 is a high-performance Trench Field Stop IGBT (Insulated Gate Bipolar Transistor) designed for a wide range of power electronics applications.
Product Features and Performance
High power density with low conduction and switching losses
Optimized for high-frequency and high-power applications
Excellent reverse recovery characteristics
Increased thermal cycling capability
Product Advantages
Improved energy efficiency
Increased reliability and robustness
Reduced system size and weight
Key Technical Parameters
Operating Temperature Range: -40°C to 175°C (TJ)
Power Dissipation: 428 W
Collector-Emitter Breakdown Voltage (Max): 600 V
Collector Current (Max): 80 A
Collector-Emitter Saturation Voltage (Max): 2.3 V
Reverse Recovery Time: 190 ns
Quality and Safety Features
Trench Field Stop IGBT technology for improved performance and reliability
Robust package design for high-reliability applications
Compatibility
Suitable for a wide range of power electronics applications, including motor drives, power supplies, and industrial equipment.
Application Areas
Industrial motor drives
Power supplies
Inverters
Welding equipment
UPS systems
Solar inverters
Product Lifecycle
This product is currently in production and is not near discontinuation.
Replacements and upgrades may be available in the future as technology advances.
Several Key Reasons to Choose This Product
High energy efficiency and low losses, leading to improved system performance and reduced operating costs.
Robust and reliable design, suitable for demanding industrial applications.
Optimized for high-frequency and high-power applications, enabling compact and lightweight system designs.
Excellent reverse recovery characteristics, reducing the risk of device failure and improving system reliability.
Broad compatibility with a wide range of power electronics applications, providing design flexibility.
