Manufacturer Part Number
IKW40N120H3FKSA1
Manufacturer
Infineon Technologies
Introduction
High-voltage, high-current Insulated Gate Bipolar Transistor (IGBT)
Designed for industrial power conversion applications
Product Features and Performance
Trench Field Stop IGBT technology
1200V Collector-Emitter Voltage Capability
80A Continuous Collector Current
483W Maximum Power Dissipation
Fast Switching Speeds with Low Switching Losses
Wide Operating Temperature Range: -40°C to 175°C
Product Advantages
Improved Efficiency and Reliability
Compact Design
Excellent Thermal Management
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCE(BR)): 1200V
Collector Current (IC): 80A
Collector-Emitter Saturation Voltage (VCE(sat)): 2.4V
Gate Charge (Qg): 185nC
Switching Times (td(on/off)): 30ns/290ns
Quality and Safety Features
RoHS Compliant
PG-TO247-3-1 Package
Designed for Industrial Power Conversion Applications
Compatibility
Compatible with Standard IGBT Drivers
Application Areas
Industrial Power Conversion
Motor Drives
Welding Equipment
Induction Heating
Uninterruptible Power Supplies (UPS)
Product Lifecycle
Currently in active production
Replacement or upgrade options available
Several Key Reasons to Choose This Product
Excellent Electrical and Thermal Performance
Reliable and Efficient Operation
Compact and Versatile Design
Wide Range of Industrial Applications
