Manufacturer Part Number
IKW03N120H2
Manufacturer
Infineon Technologies
Introduction
IGBT Transistor
High-voltage, high-speed power switching device
Product Features and Performance
High voltage rating up to 1200V
High current rating up to 9.6A
Fast switching speed with short turn-on and turn-off times
Low conduction losses with low Vce(on)
Reliable and robust design
Product Advantages
Suitable for high-power industrial applications
Efficient power conversion and control
Improved system efficiency and performance
Key Technical Parameters
Collector-Emitter Voltage (VCES): 1200V
Collector Current (IC): 9.6A
Collector-Emitter Saturation Voltage (VCE(on)): 2.8V
Turn-on/Turn-off Delay Time (td(on/off)): 9.2ns/281ns
Reverse Recovery Time (trr): 42ns
Quality and Safety Features
RoHS3 compliant
Qualified for industrial and automotive applications
Robust and reliable performance
Compatibility
Suitable for various power conversion and control applications
Compatible with standard IGBT gate drive circuits
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Welding equipment
Induction heating systems
Product Lifecycle
Currently in production
No discontinuation or replacement plans announced
Several Key Reasons to Choose This Product
High voltage and current capability for demanding applications
Fast switching speed and low losses for improved efficiency
Reliable and robust design for industrial and automotive use
Wide range of compatible applications and systems