Manufacturer Part Number
IHW30N90T
Manufacturer
Infineon Technologies
Introduction
The IHW30N90T is a high-performance trench IGBT transistor from Infineon Technologies, designed for use in a wide range of power electronics applications.
Product Features and Performance
Trench Field Stop IGBT technology for improved efficiency and reduced on-state losses
High voltage rating of 900V
Maximum collector current of 60A
Low on-state voltage drop of 1.7V at 30A
Fast switching with turn-on time of 45ns and turn-off time of 556ns
Product Advantages
Excellent efficiency and low power dissipation
Reliable and robust design for demanding applications
Compact and easy to integrate into power electronics systems
Key Technical Parameters
Collector-Emitter Breakdown Voltage (max): 900V
Collector Current (max): 60A
On-state Voltage Drop (max): 1.7V @ 30A
Gate Charge: 280nC
Pulse Collector Current (max): 90A
Operating Temperature Range: -40°C to 175°C
Quality and Safety Features
RoHS3 compliant
Robust package design (TO-247-3) for reliable operation
Compatibility
The IHW30N90T is a standard IGBT transistor that can be used in a variety of power electronics applications, including motor drives, power supplies, and industrial control systems.
Application Areas
Industrial motor drives
Power supplies
Welding equipment
Induction heating
Uninterruptible power supplies (UPS)
Solar inverters
Product Lifecycle
The IHW30N90T is an active product in Infineon's portfolio and is not currently nearing discontinuation. Replacement or upgraded products may be available in the future as technology advances.
Key Reasons to Choose the IHW30N90T
High efficiency and low power dissipation for improved system performance
Robust and reliable design for demanding applications
Compact and easy to integrate into power electronics systems
Wide operating temperature range for use in diverse environments
RoHS3 compliance for environmental sustainability
