Manufacturer Part Number
IGW50N60T
Manufacturer
Infineon Technologies
Introduction
The IGW50N60T is a high-performance Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, designed for use in a variety of power electronics applications.
Product Features and Performance
Trench Field Stop IGBT technology
High voltage rating of 600V
High current capability of 90A (max)
Low on-state voltage drop of 2V @ 15V, 50A
Fast switching with turn-on time of 26ns and turn-off time of 299ns
High power density of 333W
Wide operating temperature range of -40°C to 175°C
Product Advantages
Efficient power conversion with low conduction and switching losses
Reliable and robust design for demanding applications
Compact and easy to integrate into power electronics systems
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 600V (max)
Collector Current: 90A (max)
On-state Voltage Drop: 2V @ 15V, 50A
Gate Charge: 310nC
Collector-Emitter Saturation Voltage: 2V @ 15V, 50A
Switching Energy: 1.2mJ (on), 1.4mJ (off)
Quality and Safety Features
Designed and manufactured to high quality standards
Robust construction for reliable operation
Meets relevant safety and regulatory requirements
Compatibility
Designed for use in a wide range of power electronics applications
Suitable for integration into various power conversion systems
Application Areas
Motor drives
Power supplies
Inverters
Welding equipment
Induction heating
Uninterruptible Power Supplies (UPS)
Product Lifecycle
Currently in active production
No plans for discontinuation in the near future
Replacement or upgrade options available if required
Several Key Reasons to Choose This Product
High efficiency and low losses for improved system performance
Reliable and robust design for demanding applications
Wide operating temperature range for versatile use
Compact size and easy integration into power electronics systems
Backed by Infineon's expertise and quality standards
IGW50N65H5Infineon TechnologiesIGBT 650V 80A 305W PG-TO247-3