Manufacturer Part Number
IGW15T120
Manufacturer
Infineon Technologies
Introduction
High-performance IGBT transistor with low conduction and switching losses, suitable for high-power industrial applications.
Product Features and Performance
High voltage breakdown up to 1200V
High collector current up to 30A
Low on-state voltage drop of 2.2V at 15A
Fast switching with turn-on time of 50ns and turn-off time of 520ns
Low gate charge of 85nC for efficient drive
Wide operating temperature range of -40°C to 150°C
Product Advantages
Optimized for high efficiency power conversion
Robust design with high short-circuit withstand capability
Compact TO-247-3 package for easy integration
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 1200V
Collector Current (Max): 30A
On-state Voltage Drop: 2.2V @ 15A
Gate Charge: 85nC
Switching Times: 50ns (on), 520ns (off)
Quality and Safety Features
Designed and manufactured to high quality standards
Compliance with safety regulations for industrial applications
Compatibility
Compatible with standard IGBT gate drive circuits
Application Areas
High-power industrial equipment
Power inverters and converters
Motor drives
Welding equipment
Uninterruptible power supplies (UPS)
Product Lifecycle
This IGBT model is currently in production and widely available.
Replacement or upgraded models may become available in the future.
Several Key Reasons to Choose This Product
High efficiency and low losses for improved system performance
Robust design with high short-circuit withstand capability for reliability
Compact package and easy integration for space-constrained applications
Wide operating temperature range for use in demanding environments
Proven track record and availability from a leading semiconductor manufacturer
IGW100N60H3IXYS / Littelfuse