Manufacturer Part Number
IDH10G65C6XKSA1
Manufacturer
Infineon Technologies
Introduction
High-performance silicon carbide (SiC) Schottky diode
Product Features and Performance
Low forward voltage drop
Ultra-fast switching
High-temperature operation up to 175°C
Low reverse recovery time of 0 ns
Low capacitance of 495pF @ 1V, 1MHz
High maximum reverse voltage of 650V
High average rectified current of 24A
Product Advantages
Excellent efficiency and thermal management
Reduced power losses
Increased system reliability
Key Technical Parameters
Voltage Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Voltage DC Reverse (Vr) (Max): 650 V
Current Average Rectified (Io): 24A
Reverse Recovery Time (trr): 0 ns
Capacitance @ Vr, F: 495pF @ 1V, 1MHz
Operating Temperature Junction: -55°C ~ 175°C
Quality and Safety Features
RoHS3 compliant
Reliable and robust design
Compatibility
Through-hole mounting (PG-TO220-2 package)
Application Areas
Power supplies
Motor drives
Photovoltaic inverters
Industrial and automotive electronics
Product Lifecycle
Current product, no plans for discontinuation
Replacement and upgrade options available
Several Key Reasons to Choose This Product
Exceptional performance with low forward voltage drop and ultra-fast switching
Excellent thermal management and high-temperature capability
Reduced power losses for improved efficiency
Compact and reliable design for industrial and automotive applications
