Manufacturer Part Number
IDH08G65C6XKSA1
Manufacturer
Infineon Technologies
Introduction
High-performance Silicon Carbide (SiC) Schottky Diode
Product Features and Performance
Ultra-fast switching speed with zero reverse recovery time
Low forward voltage drop and low power losses
High blocking voltage capability up to 650V
High average rectified current of 20A
Operating temperature range from -55°C to 175°C
Product Advantages
Improved energy efficiency
Reduced system cooling requirements
Compact design with high power density
Key Technical Parameters
Reverse Leakage Current: 27A @ 420V
Forward Voltage (Vf): 1.35V @ 8A
Capacitance: 401pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0ns
Quality and Safety Features
RoHS3 compliant
Packaged in PG-TO220-2 (Through Hole) format
Compatibility
Compatible with a wide range of power electronic applications
Application Areas
Switch-mode power supplies
Motor drives
Renewable energy inverters
Electric vehicle chargers
Product Lifecycle
Currently available, no plans for discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Exceptional energy efficiency and low power losses
Ultrafast switching speed for high-frequency operation
High reliability and wide operating temperature range
Compact and space-saving design
Compliance with RoHS3 environmental regulations
