Manufacturer Part Number
IDH05G120C5XKSA1
Manufacturer
Infineon Technologies
Introduction
High-performance silicon carbide (SiC) Schottky diode
Suitable for use in power conversion, motor drives, and other high-power applications
Product Features and Performance
SiC technology for fast switching and low losses
Low forward voltage drop
Ultra-fast reverse recovery time of 0 ns
Wide operating temperature range of -55°C to 175°C
High reverse voltage capability of 1200 V
High average rectified current of 5 A
Product Advantages
Improved energy efficiency
Reduced system size and weight
Increased reliability and durability
Key Technical Parameters
Reverse Leakage Current: 33 A @ 1200 V
Forward Voltage Drop: 1.8 V @ 5 A
Capacitance: 301 pF @ 1 V, 1 MHz
Reverse Recovery Time: 0 ns
Operating Temperature Range: -55°C to 175°C
Quality and Safety Features
RoHS3 compliant
Housed in a PG-TO220-2-1 package
Compatibility
Suitable for use in power conversion, motor drives, and other high-power applications
Application Areas
Power electronics
Motor drives
Renewable energy systems
Industrial automation
Transportation
Product Lifecycle
This product is currently available and not nearing discontinuation.
No direct replacements or upgrades are known at this time.
Key Reasons to Choose This Product
High energy efficiency and reduced system size/weight due to SiC technology
Improved reliability and durability with wide operating temperature range
Fast switching and low losses for improved system performance
High reverse voltage capability and average rectified current for versatile applications
