Manufacturer Part Number
IDD05SG60C
Manufacturer
Infineon Technologies
Introduction
The IDD05SG60C is a high-performance SiC (Silicon Carbide) Schottky diode from Infineon Technologies, designed for use in power electronics applications.
Product Features and Performance
600V DC reverse voltage rating
5A average rectified current
0ns reverse recovery time
110pF capacitance at 1V, 1MHz
Operating temperature range of -55°C to 175°C
Surface mount package (TO-252-3, DPak)
Product Advantages
Excellent switching performance with ultra-fast recovery
High efficiency and low power losses
High voltage and current handling capabilities
Compact and robust package design
Key Technical Parameters
Voltage DC Reverse (Vr) (Max): 600V
Current Average Rectified (Io): 5A
Reverse Recovery Time (trr): 0ns
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Operating Temperature Junction: -55°C to 175°C
Quality and Safety Features
Robust and reliable SiC technology
Designed and manufactured to high quality standards
Compliant with relevant safety regulations and standards
Compatibility
Suitable for a wide range of power electronics applications, including power supplies, motor drives, and renewable energy systems.
Application Areas
Power supplies
Motor drives
Renewable energy systems
Industrial electronics
Automotive electronics
Product Lifecycle
The IDD05SG60C is a current production product and is not nearing discontinuation.
Replacement or upgrade options may be available from Infineon or other manufacturers.
Key Reasons to Choose This Product
Excellent switching performance and efficiency with ultra-fast recovery
High voltage and current handling capabilities
Compact and robust package design
Reliable and durable SiC technology
Suitable for a wide range of power electronics applications
