HFA08TB60PBF - Infineon Technologies

Manufacturer Part Number

HFA08TB60PBF

Manufacturer

Infineon Technologies

Introduction

High-speed, ultra-low reverse recovery charge silicon diode for high frequency/high power applications

Product Features and Performance

Extremely low reverse recovery charge (Qrr) and time (trr) for high frequency operation

Low forward voltage drop (VF) for high efficiency

High surge current capability

Robust and reliable design

Product Advantages

Enables high-efficiency power conversion in industrial, consumer, and automotive applications

Supports high-frequency switching for compact and cost-effective power supply designs

Withstands high voltage and current spikes

Key Technical Parameters

Current Reverse Leakage @ Vr: 5 A @ 600 V

Voltage Forward (Vf) (Max) @ If: 1.7 V @ 8 A

Reverse Recovery Time (trr): 55 ns

Voltage DC Reverse (Vr) (Max): 600 V

Current Average Rectified (Io): 8A

Quality and Safety Features

RoHS3 compliant

Reliable TO-220AC package

Compatibility

Universal compatibility with various high-frequency, high-power electronic applications

Application Areas

Switch-mode power supplies

Inverters

Motor drives

Power factor correction circuits

Solar inverters

Product Lifecycle

Currently in production

No plans for discontinuation

Replacements and upgrades available

Key Reasons to Choose This Product

Exceptional high-frequency performance with ultra-low reverse recovery charge and time

High efficiency due to low forward voltage drop

Robust design for high voltage and current spikes

Compact and cost-effective power supply designs

Reliable operation in industrial, consumer, and automotive applications