Manufacturer Part Number
FZ3600R17KE3
Manufacturer
Infineon Technologies
Introduction
This is a high-power discrete semiconductor product from Infineon Technologies, specifically a transistor IGBT (Insulated Gate Bipolar Transistor) module.
Product Features and Performance
350 W maximum power
Wide operating temperature range of -40°C to 125°C (TJ)
Input capacitance (Cies) of 3.3 nF @ 25 V
Collector-emitter breakdown voltage (max) of 1700 V
Low on-state voltage (Vce(on)) of 2.45 V @ 3.6 kA, 15 V
Collector cutoff current (max) of 5 mA
Product Advantages
Efficient power handling capabilities
Wide temperature tolerance
High-voltage operation
Low on-state losses
Key Technical Parameters
Manufacturer Part Number: FZ3600R17KE3
Package/Case: Module (AG-IHM190-2-1)
Configuration: Single Switch
RoHS: Non-compliant
Quality and Safety Features
Chassis mount design for secure installation
No NTC thermistor included
Compatibility
This IGBT module is designed for a wide range of industrial and power electronics applications.
Application Areas
Motor drives
Power conversion systems
Welding equipment
Induction heating
Renewable energy systems
Product Lifecycle
This IGBT module is an established product in Infineon's portfolio and is currently available. Replacements or upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
Robust power handling capabilities
Wide temperature operating range
High voltage rating for demanding applications
Efficient performance with low on-state losses
Secure chassis mount design for reliable installation
