Manufacturer Part Number
FZ1800R12KL4C
Manufacturer
Infineon Technologies
Introduction
This product is a high-power discrete semiconductor device, specifically an Insulated Gate Bipolar Transistor (IGBT) module.
Product Features and Performance
Rated for a maximum power of 11,500 W
Operating temperature range of -40°C to 125°C
Input capacitance (Cies) of 135 nF at 25 V
Collector-Emitter Breakdown Voltage (max) of 1,200 V
Collector Current (max) of 2,850 A
Collector-Emitter Saturation Voltage (max) of 2.6 V at 15 V gate voltage and 1,800 A collector current
Collector Cutoff Current (max) of 5 mA
Product Advantages
High power handling capability
Wide operating temperature range
Low input capacitance for efficient switching
High voltage and current ratings
Key Technical Parameters
Manufacturer Part Number: FZ1800R12KL4C
Package: Module
Mounting Type: Chassis Mount
RoHS: Non-compliant
Quality and Safety Features
No NTC thermistor included
Compatibility
Can be used in various power electronics applications that require high-power semiconductor devices
Application Areas
Suitable for use in industrial power converters, motor drives, and other high-power electrical systems
Product Lifecycle
This product is currently available, and there is no indication of it being near discontinuation.
Replacement or upgrade options may be available from Infineon or other IGBT module manufacturers.
Key Reasons to Choose This Product
High power handling capability
Wide operating temperature range
Low input capacitance for efficient switching
High voltage and current ratings
Proven reliability and performance from Infineon Technologies
FZ1800R17Eupec (Infineon)IGBT Module